| PART |
Description |
Maker |
| THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity
8M x 36 Bit DRAM Module with Parity
8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| THM401020SG-80 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDSx40位动态RAM模块
1,048,576 WORDSx40 BIT DYNAMIC RAM MODULE
1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| THM362020S-10 THM362020S-80 THM362020SG-10 THM3620 |
2097152 WORDS x 36BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 36BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116 |
4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
|
http://
SIEMENS AG
|
| HYB314405BJL-60 HYB314405BJL-70 Q67100-Q2124 |
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
1M x 4-Bit Dynamic RAM
|
SIEMENS AG
|
| HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
|
SIEMENS AG
|
| HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
| MC-4516CA726PF-A10 MC-4516CA726PF-A80 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
